Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured

0.7-μ\mu m InP DHBT Technology With 400-GHz fT{f}_{{T}} and fMAX{f}_{\text{MAX}} and 4.5-V BV CE0 for High Speed and High Frequency Integrated Circuits

We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology

160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-V ppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications

International audienceThis letter reports on a 108-GHz bandwidth 0.5- μm InP DHBT analog-multiplexer-driver (AMUX-driver). To the best of the authors’ knowledge, this 2:1 AMUX-driver shows unprecedented 1.9-V ppd 160-GSa/s 160-GBd non-return-to-zero (NRZ) and 2.4-V ppd 100-GSa/s 100-GBd PAM-4 output swings, with very high-quality eye diagrams, without any digital signal processing (DSP) or postprocessing. Up to 3.2 V ppd is obtained in NRZ at 100 GBd. The lumped AMUX-driver also shows record 25.7-dB gain and 2.08-THz gain-bandwidth product with 11.1-dB equalizing capabilities at 86.6 GHz

Terahertz detection and imaging with sensitive InP DHBTs for estimation of plant water status

Nowadays high frequency electronics uses two distinct families of semiconductors-based transistors: field effect transistors and heterojunction bipolar transistors (HBTs). They compete reaching impressive cut off frequencies going up to THz range. Except their usual functions related to switching and amplifying of current or voltage both have been demonstrated as efficient direct THz radiation detectors. Indeed, both types of the transistors have shown that once equipped with antennas, they can capture THz radiation from the open space and deliver the voltage/current proportional to incoming THz radiation power (THz rectification).Most of the work was dedicated to the field effect transistors that rectify THz radiation by plasma related nonlinearities. After pioneering work of [1-2] only very small attention was devoted to HBTs. In this work, we present experimental studies of THz detection by different HBTs fabricated using InP double HBT (DHBT) technologies [3]. Different devices were investigated: single-finger devices and multi-finger devices formed using equally spaced parallel single-transistor fingers [4]. We have evaluated the room temperature detection performances of the devices in the sub-THz range from 250 GHz up to 650 GHz and analyse in details the physical mechanisms of THz detection. Finally, THz domain is an excellent non-contact probe of water content in biological tissues [5]. We also show that the sensitive HBTs detectors can be used for THz spectroscopy and 2D THz imaging to study the water dynamics of sorghum (a grass species cultivated for its grain) by monitoring the dehydration kinetics of its leaves